Method for manufacturing silicon carbide base body, method for manufacturing semiconductor device, silicon carbide base body, and semiconductor device

A method for manufacturing a semiconductor device, the method comprising:

• preparing a silicon carbide base body, the silicon carbide base body including
• a first base body including silicon carbide, the first base body including a first base body surface tilted with respect to a (0001) plane of the first base body so that a first line segment where the first base body surface and the (0001) plane of the first base body intersect is along a [11-20] direction of the first base body, and
• a first layer provided at the first base body surface, the first layer including silicon carbide and including a first-layer surface and a first-layer opposite-surface, the first-layer opposite-surface being between the first base body surface and the first-layer surface, the first-layer surface being tilted with respect to a (0001) plane of the first layer so that a second line segment where the first-layer surface and the (0001) plane of the first layer intersect is along a [−1100] direction;
• and
• forming a second layer at the first-layer surface, the second layer including silicon carbide.

A semiconductor device, comprising:

• a first base body including silicon carbide, the first base body including a first base body surface tilted with respect to a (0001) plane of the first base body so that a first line segment where the first base body surface and the (0001) plane of the first base body intersect is along a [11-20] direction of the first base body;
• a first layer provided at the first base body surface, the first layer including silicon carbide and including a first-layer surface and a first-layer opposite-surface, the first-layer opposite-surface being between the first base body surface and the first-layer surface, the first-layer surface being tilted with respect to a (0001) plane of the first layer so that a second line segment where the first-layer surface and the (0001) plane of the first layer intersect is along a [−1100] direction;
• and
• a second layer provided at the first-layer surface, the second layer including silicon carbide.