Method of growing semiconductor layers, method of manufacturing semiconductor device, and method of growing balk crystal

A method of growing semiconductor layers, the method comprising:

• growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure;
• cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer;
• and
• growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are the same as the material and the crystal structure of the first semiconductor layer, respectively;
• wherein the crystal layer is constituted of α-aluminum oxide or α-iron oxide, and
• wherein the first semiconductor layer and the second semiconductor layer are constituted of α-gallium oxide.