Sputtering target, oxide semiconductor thin film, and method for producing these
AssigneeIdemitsu Kosam Co., Ltd.
InventorsKazuaki Ebata, Nozomi Tajima
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Abstract
A sputtering target including an oxide that includes an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element, wherein the oxide includes a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10) and a bixbyite structure compound represented by In2O3.
Claims9
An oxide semiconductor thin film formed by a sputtering method with the use of a sputtering target comprising an oxide that comprises an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element
- wherein the atomic ratio of In, Sn, Zn and Al satisfies the following formulas (1) to (4):
- 0.50≤In/(In+Sn+Zn+Al)≤0.75 (1)
- 0.01≤Sn/(In+Sn+Zn+Al)≤0.30 (2)
- 0.10≤Zn/(In+Sn+Zn+Al)≤0.70 (3)
- 0.01≤Al/(In+Sn+Zn+Al)≤0.40 (4)
- and wherein in the formulas, In, Sn, Zn and Al independently indicate an atomic ratio of each element in the sputtering target.
A method for producing an oxide semiconductor thin film, wherein the film is formed by a sputtering method with the use of sputtering target in an atmosphere of a mixed gas that comprises:
- one or more selected from water vapor, an oxygen gas and a nitrous oxide gas and further comprises a rare gas;
- wherein the sputtering target comprises an oxide that comprises an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element
- wherein the atomic ratio of In, Sn, Zn and Al satisfies the following formulas (1) to (4):
- 0.50≤In/(In+Sn+Zn+Al)≤0.75 (1)
- 0.01≤Sn/(In+Sn+Zn+Al)≤0.30 (2)
- 0.10≤Zn/(In+Sn+Zn+Al)≤0.70 (3)
- 0.01≤Al/(In+Sn+Zn+Al)≤0.40 (4)
- and wherein in the formulas, In, Sn, Zn and Al independently indicate an atomic ratio of each element in the sputtering target.
Dependencies are inferred from the claim text.