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US 11,443,942 B2Granted
Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures
AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy
InventorsNeeraj Nepal, Charles R. Eddy, Jr., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
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Abstract
Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
Claims19
A method for growing crystalline, epitaxial indium nitride (InN) material, the method comprising:
- providing an a-plane Al2O3 template and growing cubic InN thereon using pulsed growth plasma-assisted atomic layer epitaxy at a temperature lower than 300° C.,
- wherein the obtained cubic InN has the same crystal structure throughout.
Dependencies are inferred from the claim text.