Substrate processing apparatus
AssigneeASM IP Holding B.V.
InventorsWonKi Jeong, JuIll Lee, HaSeok Jang
Life of this patent
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Abstract
A substrate processing apparatus having an improved exhaust structure includes a grounded conductive extension portion configured to prevent generation of parasitic plasma in an exhaust space connected to a reaction space. The substrate processing apparatus prevents generation of parasitic plasma in an area, such as the reaction space, other than the reaction space. Thus, power loss may be prevented and a stable plasma process may be achieved.
Claims21
A substrate processing apparatus comprising:
- a substrate support unit configured to support a substrate;
- a processing unit disposed above the substrate support unit, wherein a reaction space is defined between the substrate support unit and the processing unit;
- an exhaust unit providing an exhaust space connected to the reaction space;
- and
- a conductive extension portion surrounding at least a part of the exhaust space.
A substrate processing apparatus comprising:
- a substrate support unit;
- a first cover disposed on the substrate support unit and comprising at least one processing unit;
- a second cover disposed under the first cover and comprising a barrier wall;
- and
- a conductive extension portion extending from the barrier wall and in contact with the second cover,
- wherein a reaction space is defined by an outer surface of the barrier wall, an upper surface of the substrate support unit, and a lower surface of the first cover,
- the second cover comprises an exhaust space connected to the reaction space, and
- the conductive extension portion is grounded and extends from an inner surface of the barrier wall to surround at least a part of the exhaust space.
A substrate processing apparatus including a reaction space and an exhaust space connected to the reaction space, the substrate processing apparatus comprising:
- a grounded conductive extension portion disposed in the exhaust space and configured to prevent generation of parasitic plasma in the exhaust space.
Dependencies are inferred from the claim text.