Upper electrode and plasma processing apparatus

A plasma processing apparatus comprising:

• a plasma processing chamber;
• a substrate support disposed in the plasma processing chamber, the substrate support including a lower electrode;
• and
• an upper electrode structure disposed above the substrate support, the upper electrode structure including:
• a cooling plate having at least one coolant passage;
• an electrode plate disposed below the cooling plate, the electrode plate having a first through hole;
• a conductive plate disposed between the cooling plate and the electrode plate, the conductive plate having a second through hole and a plurality of third through holes surrounding the second through hole;
• and
• an elastic electrostatic attracting layer sandwiched between the electrode plate and the conductive plate, the elastic electrostatic attracting layer having a fourth through hole, wherein
• the first through hole, the second through hole, and the fourth through hole are vertically aligned;
• and
• the plurality of third through holes each have an upper end connected to an inert gas source or an exhaust device, and a lower end in communication with the fourth through hole.

A plasma processing apparatus comprising:

• a plasma processing chamber;
• a substrate support disposed in the plasma processing chamber, the substrate support including a lower electrode;
• and
• an upper electrode structure disposed above the substrate support, the upper electrode structure including:
• a cooling plate having at least one coolant passage;
• an electrode plate disposed below the cooling plate, the electrode plate having a plurality of first through holes;
• a conductive plate disposed between the cooling plate and the electrode plate, the conductive plate having a plurality of second through holes corresponding to the first through holes, respectively;
• an elastic electrostatic attracting layer sandwiched between the electrode plate and the conductive plate, the elastic electrostatic attracting layer having a plurality of component holes corresponding to the first through holes, respectively;
• and
• a plurality of shield components disposed in the plurality of component holes of the elastic electrostatic attracting layer, respectively, each shield component having a third through hole, wherein
• the first through hole is in communication with the corresponding second through hole through the corresponding third through hole.