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US 11,443,923 B2Granted
Apparatus for fabricating a semiconductor structure and method of fabricating a semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKeith Kuang-Kuo Koai, Shih-Kuo Liu, Wen-Chih Wang, Hsin-Liang Chen
Life of this patent
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Abstract
The present disclosure provides an apparatus for fabricating a semiconductor structure, including a chuck, an edge ring surrounding the chuck, wherein the edge ring comprises a cavity, a focus ring adjacent to an edge of the chuck and over the edge ring, and a first actuator in the cavity of the edge ring and engaging with the focus ring.
Claims20
An apparatus for fabricating a semiconductor structure, comprising:
- a chuck;
- an edge ring at least partially surrounding the chuck;
- a cavity defined by the chuck and the edge ring;
- a focus ring adjacent to an edge of the chuck and over the edge ring;
- and
- a first actuator in the cavity of the edge ring and engaging with the focus ring, wherein the first actuator comprises:
- an outer ring disposed in the cavity, wherein the outer ring is fixed to the edge ring, and a chamber is defined in the outer ring;
- a piezoelectric layer apart from a top surface of the cavity, wherein an edge of the piezoelectric layer is fixed by the outer ring;
- and
- an inner ring disposed in the chamber at a center portion of the piezoelectric layer, wherein the inner ring overlaps with the focus ring from a top view perspective.
7 more elements
An apparatus for fabricating a semiconductor structure, comprising:
- a chuck;
- an edge ring at least partially surrounding the chuck;
- a cavity defined by the chuck and the edge ring, wherein a first portion of the chuck and a first portion of the edge ring are directly below the cavity;
- a focus ring adjacent to an edge of the chuck and over the edge ring;
- and
- a piezoelectric transducer component engaging with the focus ring, wherein the piezoelectric transducer comprises:
- an insulation ring disposed in the cavity, wherein the first portion of the chuck and the first portion of the edge ring are under a coverage of a vertical projection area of the insulation ring;
- a piezoelectric layer, wherein a peripheral portion of the piezoelectric layer is fixed by the insulation ring, and a bottom surface of the piezoelectric layer is apart from the first portion of the chuck and the first portion of the edge ring along a vertical direction;
- a lift pin, protruding away from the insulation ring;
- and
- an inner ring in the insulation ring, wherein the inner ring bears the lift pin, the inner ring is free from being in direct contact with the insulation ring, and the inner ring is at least partially surrounded by the piezoelectric layer laterally.
8 more elements
An apparatus for fabricating a semiconductor structure, comprising:
- a plasma chamber;
- a chuck disposed in the plasma chamber;
- an edge ring at least partially surrounding the chuck;
- a cavity defined by the chuck and the edge ring;
- a focus ring adjacent to an edge of the chuck and disposed over the edge ring, wherein the focus ring comprises a first material that erodes under plasma;
- and
- an actuator supporting a bottom surface of focus ring, wherein the actuator comprises:
- an outer ring in the cavity, wherein a chamber is defined in the outer ring, and a pressure in the chamber is different from an environment pressure;
- a piezoelectric layer in the outer ring, wherein an upper surface and a bottom surface of a peripheral portion of the piezoelectric layer are fixed;
- and
- an inner ring in the chamber, wherein the inner ring is at least partially surrounded by the piezoelectric layer laterally.
8 more elements
Dependencies are inferred from the claim text.