Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsJun Yamawaku, Tatsuo Matsudo, Chishio Koshimizu
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AssigneeTokyo Electron Limited
InventorsJun Yamawaku, Tatsuo Matsudo, Chishio Koshimizu
Estimating the term…
A plasma processing apparatus includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil having open opposite ends and, at a central portion of a line between the open ends, a supply point of a high frequency power and a grounding point grounded through a capacitor; a second high frequency antenna formed of a planar vortex coil disposed between first and second high frequency antenna elements of the first high frequency antenna; and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from a high frequency power supply toward the first high frequency antenna which is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when the frequency of the high frequency power is changed.
A plasma processing apparatus for performing a plasma process on a substrate in a processing chamber, the apparatus comprising:
Dependencies are inferred from the claim text.