Film formation via pulsed RF plasma

A method of forming a film, comprising:

• introducing a precursor gas to a process volume of a process chamber, the process chamber having a chamber lid, a chamber bottom, and a sidewall extending therebetween;
• ionizing the precursor gas to form a plasma;
• pulsing an RF power source to cause a duty cycle on time (TON) of a duty cycle of a pulse generated by the RF power source to be less than about 20% of a total cycle time (TTOT) of the duty cycle;
• and
• depositing a film having a hydrogen content below about 5% onto a substrate positioned on a substrate support inside of the process volume, wherein the substrate support is at a temperature from 350° C. to 450° C., and wherein the thickness of the film has a variation of 6% or less.

A method of forming a film, comprising:

• (a) forming a plasma in a process chamber from a film precursor;
• (b) pulsing an RF power source to cause a duty cycle on time (TON) of a duty cycle of a pulse generated by the RF power source to be less than about 20% of a total cycle time (TTOT) of the duty cycle;
• (c) depositing a first film interlayer on a substrate positioned on a substrate support inside of the process chamber, wherein the substrate support is at a temperature from 350° C. to 450° C.;
• (d) subsequent to (c), purging the process chamber;
• (e) subsequent to (d), introducing a hydrogen plasma to the process chamber;
• and
• (f) repeating (b)-(e) to form a film including a hydrogen content below 5% and a variation in thickness less than 6%.