Error avoidance based on voltage distribution parameters of block families

A system comprising:

• a memory;
• and
• a processing device communicably coupled to the memory, the processing device to perform operations comprising:
• receiving a request to read data from a block of the memory;
• determining, using a data structure mapping one or more sets of block identifiers to corresponding voltage distribution parameter values, a voltage distribution parameter value associated with the block of the memory;
• determining a set of read levels associated with the voltage distribution parameter value, wherein each read level in the set of read levels corresponds to a respective voltage distribution of at least one memory cell in which at least a portion of the block of the memory is stored;
• and
• reading, using the determined set of read levels, data from the block of the memory.

A non-transitory machine-readable storage medium storing instructions that cause a processing device to perform operations comprising:

• receiving, a request to read data from a block of a memory device coupled with the processing device;
• determining, using a first data structure mapping block identifiers to corresponding block family identifiers, a block family associated with the block of the memory device;
• determining, using a second data structure mapping block family identifiers to corresponding voltage distribution parameter values, a voltage distribution parameter value associated with the block family;
• determining a set of read levels associated with the voltage distribution parameter value, wherein each read level in the set of read levels corresponds to a respective voltage distribution of at least one memory cell comprised by the block of the memory device;
• and
• reading, using the determined set of read levels, data from the block of the memory device.