Safety and correctness data reading and programming in a non-volatile memory device

An apparatus, comprising:

• a host device, comprising a system-on-chip (SoC), wherein the SoC is configured to perform error correction operations on data retrieved from an addressable space of a non-volatile memory component;
• the non-volatile memory component, comprising a structure independent from the SoC but coupled to the host device, including an array of memory cells with a plurality of memory blocks, wherein a memory block of the plurality of memory blocks stores data in its addressable space;
• a dummy row, corresponding to the memory block of the plurality of memory blocks, storing a known pattern and trimming parameters to read the known pattern outside the addressable space of the memory block;
• a controller of the memory component configured to trigger a detection of thermal drift or aging utilizing the known pattern stored in the dummy row responsive to a number of ECC bits from correction of the data retrieved from the addressable space of the non-volatile memory component by the SoC exceeding a threshold;
• sensing circuitry, driven by the controller, for reading the known pattern stored in the dummy row by performing a reading cycle and changing a read trimming parameter up to the moment when the value of the known pattern is read correctly utilizing the read trimming pattern;
• determining in a subsequent reading phase, based on an absence of the read trimming parameter in the dummy row utilizable to read the known pattern in the dummy row, a power loss has occurred;
• and
• erasing the whole memory block responsive to the determination the power loss has occurred.

A method, comprising:

• storing a known pattern in a dummy row corresponding to a memory block of a plurality of memory blocks of an array of memory cells, wherein the memory block stores data in an addressable location of the memory block and wherein the dummy row stores the known pattern outside an addressable space of the memory block;
• performing reading cycles and changing a trimming parameter stored in the dummy row up to a moment when the known pattern is read correctly utilizing the trimming parameter;
• adopting the changed trimming parameter of the correct reading of the known pattern for subsequent reading phases of the addressable location;
• determining in a subsequent reading phase, based on an absence of the trimming parameter in the dummy row utilizable to read the known pattern, a power loss has occurred;
• and
• erasing the whole memory block responsive to the determination the power loss has occurred.