Memory structure with marker bit and operation method thereof
AssigneeWinbond Electronics Corp.
InventorChi-Shun Lin
Life of this patent
Estimating the term…
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AssigneeWinbond Electronics Corp.
InventorChi-Shun Lin
Estimating the term…
A memory structure and an operation method are provided. The memory structure comprises a memory array, having plural blocks, each of the blocks having plural word lines coupled to memory cells; and one marker bit column having one or plural marker bit units, and the one plural marker bit units being coupled to one or the plural word lines. In performing a block erase operation to the blocks of the memory array, for each block, the controller pre-reads the data from the marker bit unit is pre-read, and the marker bit unit is erased during performing the block erase operation if the marker bit indicates a program state, and the block erase operation is skipped if the marker bit indicates an erase state.
A memory structure with marker bit, comprising:
An operation method for a memory structure with marker bit, the memory structure including a memory array that has a plurality of blocks and each of the plurality of blocks has a plurality of word lines;
Dependencies are inferred from the claim text.