Nonvolatile memory and method of operating nonvolatile memory
AssigneeSamsung Electronics Co., Ltd.
InventorMakoto Hirano
Life of this patent
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Abstract
A nonvolatile memory device includes: a memory cell array in which a plurality of memory cells are arranged at intersections between a plurality of word-lines and a plurality of bit-lines; and a word-line select circuit configured to, in response to a first global word-line select signal, start reading a target memory cell connected to a target word-line and provide a reading result of the target memory cell to a sensing line through at least one adjacent word-line that is adjacent to and coupled to the target word-line.
Claims20
A nonvolatile memory device comprising:
- a memory cell array including a plurality of memory cells arranged at intersections between a plurality of substantially parallel word-lines and a plurality of bit-lines;
- and
- a word-line select circuit including a plurality of first transistors each having a first terminal connected to a respective one of the plurality of word-lines, and a plurality of second transistors each having a first terminal connected to the respective one of the plurality of word-lines,
- wherein each of the plurality of first transistors has a second terminal connected to a pre-select line, and each of the plurality of second transistors has a second terminal connected to a sensing line,
- wherein at least one of the plurality of first transistors having a first terminal connected to a respective word-line of the plurality of word-lines has a control terminal connected to a control terminal of at least one of the plurality of second transistors having a first terminal connected to an adjacent word-line of the plurality of word-lines, respectively.
A nonvolatile memory device comprising:
- a memory cell array including a plurality of memory cells arranged at intersections between a plurality of word-lines and a plurality of bit-lines;
- and
- a word-line select circuit configured to, in response to a plurality of global word-line select signals that are different from each other, determine whether to start reading a target memory cell connected to a target word-line and whether to apply a voltage of the target word-line to a sensing line.
A method of operating a nonvolatile memory device to read a target memory cell connected to a target word-line and a target bit-line, the method comprising:
- applying a word-line pre-charge voltage to the target word-line, in response to a first global word-line select signal and a first local word-line select signal;
- floating the target word-line, in response to a change in a logic state of the first local word-line select signal;
- applying a bit-line pre-charge voltage to the target bit-line, in response to a bit-line select signal;
- and
- determining a program state of the target memory cell through at least one adjacent word-line that is adjacent to the target word-line.
Dependencies are inferred from the claim text.