Memory device and electronic device

A memory device comprising:

• a memory cell;
• a first region;
• a first word line;
• a second word line;
• a first bit line;
• and
• a second bit line,
• wherein the memory cell comprises a first transistor and a second transistor,
• wherein a semiconductor layer of the first transistor comprises a metal oxide,
• wherein the first region comprises a plurality of gaps,
• wherein the first bit line and the second bit line extend in a first direction,
• wherein the first word line and the second word line extend in a second direction,
• wherein a gate of the first transistor is electrically connected to the first word line,
• wherein one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor,
• wherein the other of the source and the drain of the first transistor is electrically connected to the first bit line,
• wherein one of a source and a drain of the second transistor is electrically connected to the second word line,
• wherein the other of the source and the drain of the second transistor is electrically connected to the second bit line,
• wherein the first region comprises a region extending in the first direction,
• wherein in the region extending in the first direction, each of the plurality of gaps extends in a direction intersecting with the first direction, and
• wherein an area where a gate electrode and a semiconductor layer of the second transistor overlap with each other is larger than an area where a gate electrode and the semiconductor layer of the first transistor overlap with each other.