Method of inserting dummy boundary cells for macro/IP and IC

A method for inserting dummy boundary cells in an integrated circuit (IC), comprising:

• obtaining layout information of a plurality of macros of the IC;
• obtaining individual main pattern of each of the macros according to the layout information;
• arranging a plurality of first dummy boundary cells to form a first macro boundary for each first macro of the macros, wherein the main pattern of each of the first macros comprises a plurality of transistors with a first gate length;
• arranging a plurality of second dummy boundary cells to form a second macro boundary for each second macro of the macros, wherein the main pattern of each of the second macros comprises a plurality of transistors with a second gate length;
• and
• merging the first and second macros and a top channel into floorplan of the IC, wherein the top channel is arranged between the first and second macros and is filled with first dummy boundary cells,
• wherein a plurality of dummy patterns of the first dummy boundary cells have the first gate length, and a plurality of dummy patterns of the second dummy boundary cells have the second gate length, wherein the first gate length is different from the second gate length.

A method for inserting dummy boundary cells in an integrated circuit (IC), comprising:

• merging a plurality of macros and a top channel into floorplan of the IC, wherein the top channel is divided into a plurality of sub-channels arranged between the macros, and each of the sub-channels is filled with a plurality of first dummy boundary cells, wherein each of the macros comprises a macro boundary and a main pattern surrounded by the macro boundary;
• and
• replacing a portion of the first dummy boundary cells within a first sub-channel of the sub-channels with a plurality of second dummy boundary cells, wherein the first sub-channel is arranged between a first macro and a second macro of the macros,
• wherein the macro boundary of the first macro is formed by the first dummy boundary cells, and the macro boundary of the second macro is formed by the second dummy boundary cells,
• wherein a first gate length of dummy patterns within the first dummy boundary cells is different from a second gate length of dummy patterns within the second dummy boundary cells, and the first and second dummy boundary cells are the same size.