US 11,443,093 B2Granted

Semiconductor device

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsYu-Jen Chen, Ling-Sung Wang, I-Shan Huang, Chan-yu Hung

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Abstract

The semiconductor structure includes first and second active regions arranged in a first grid oriented in a first direction. The semiconductor structure further includes gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction. The first and second active regions are separated, relative to the second direction, by a gap. Each gate electrode includes a first segment and a gate extension. Each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT≤150 nanometers (nm). Each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular.

Claims20

Dependent claims

A semiconductor structure comprising:

first and second active regions arranged, wherein each of the first and second active regions has a long axis extending in a first direction;
gate electrodes arranged spaced apart and on corresponding ones of the active regions, wherein each of the gate electrodes has a long axis extending in a second direction, the second direction being substantially perpendicular to the first direction;
wherein:
the first and second active regions are separated, relative to the second direction, by a gap;
each gate electrode includes a first segment and a gate extension;
each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT≤150 nanometers (nm);
and
each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular;
and
a conductive element having a long axis extending in the first direction, wherein the conductive element is between a gate extension of a first gate electrode of the gate electrodes and a gate extension of a second gate electrode of the gate electrodes, an entirety of the conductive element is beyond the corresponding active region, and a width of the conductive element the first direction increases as a distance from the gate extension increases along an entirety of the conductive element in the second direction.

7 more elements

A semiconductor structure comprising:

a first active region extending in a first direction;
a second active region extending in the first direction, wherein the first active region is separated from the second active region in a second direction, and the second direction is substantially perpendicular to the first direction;
a first gate structure extending in the second direction, wherein the first gate structure comprises a first gate electrode and a first gate extension, the first gate electrode extends over the first active region, the first gate extension extends beyond a boundary of the first active region, in a top view, toward the second active region, and the first gate extension comprises a substantially rectangular first portion;
a second gate structure extending in the second direction, wherein the second gate structure comprises a second gate electrode and a second gate extension, the second gate electrode extends over the second active region, the second gate extension extends beyond a boundary of the second active region, in a top view, toward the first active region, the second gate extension is substantially rectangular, and the first gate electrode is aligned with the second gate electrode;
a third gate structure extending in the second direction, wherein the third gate structure comprises a third gate electrode and a third gate extension, the third gate electrode extends over the first active region, the first gate extension extends beyond the boundary of the first active region, in a top view, toward the second active region, the third gate extension is substantially rectangular, and the third gate electrode is separated from the first gate electrode in the first direction;
and
a conductive element extending in the first direction, wherein the conductive element is between the first gate extension and the second gate extension, an entirety of the conductive element is beyond the first active region, and a width of the conductive element in the first direction increases as a distance from the gate extension increases along an entirety of the conductive element in the second direction.

4 more elements

A semiconductor structure comprising:

a first active region extending in a first direction;
a second active region extending in the first direction, wherein the first active region is separated from the second active region in a second direction, and the second direction is substantially perpendicular to the first direction;
a first gate structure extending in the second direction, wherein the first gate structure comprises a first gate electrode, a first gate extension and a rear side extension, the first gate electrode extends over the first active region, the first gate extension extends beyond a boundary of the first active region, in a top view, toward the second active region, the rear side extension extends beyond the first active region on a side opposite the second active region, an entirety of the rear side extension has a same width as the first gate electrode in the first direction, and the first gate extension comprises:
a first portion having a first width in the first direction, and
a second portion having a second width in the first direction, wherein the second width is different from the first width, an entirety of the second portion is beyond the first active region, and the second width in the first direction increases as a distance from the gate extension increases along an entirety of the second portion in the second direction;
and
a second gate structure extending in the second direction, wherein the second gate structure comprises a second gate electrode and a second gate extension, the second gate electrode extends over the second active region, the second gate extension extends beyond a boundary of the second active region, in a top view, toward the first active region, and the second gate extension comprises:
a third portion having the first width in the first direction, and
a fourth portion having the second width in the second direction.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/557,054Filed 30 Aug 2019 · division
Priority: 26 May 2017
Published: US 2020/0203167 A125 Jun 2020
Granted: 13 Sep 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification29 codes

G06F 30/392
Circuit design at the physical level: floor-planning or layout, e.g. partitioning or placement
G03F 1/36
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles…
G03F 1/70
Preparation processes not covered by groups G03F1/20 - G03F1/50: adapting basic layout or design of masks to lithographic process requirements,…
G06F 30/39
Circuit design: circuit design at the physical level

Family

Application62/511,481Us provisional application · filed 26 May 2017
Application15/949,804Parent of this division · filed 10 Apr 2018
US 2020/0203167 A1Pre-grant publication · published 25 Jun 2020
US 10,417,369 B2Parent of this division
US 2018/0341736 A1Published application
US 11,443,093 B2This patent

From the US filing history. Foreign family members aren’t listed.

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