Memory sub-system temperature control

An apparatus, comprising:

• a memory sub-system temperature control component configured to:
• determine a first monitored temperature of a memory component of the memory sub-system, wherein data is written to the memory component of the memory sub-system at the first monitored temperature;
• determine that the first monitored temperature exceeds a threshold temperature range that extends from a lower temperature value to a relatively higher temperature value;
• assign an indication to the data written to the memory component of the memory sub-system at the first monitored temperature as data written above the threshold temperature range when the first monitored temperature is above the threshold temperature range;
• determine a second monitored temperature of the memory component of the memory sub-system within the threshold temperature range;
• and
• rewrite the data to the memory component of the memory sub-system at the second monitored temperature, wherein when the first monitored temperature is below the threshold temperature range the data is rewritten to the memory component of the memory sub- system while the temperature of the memory component is at a low temperature subset of the threshold temperature range and when the first monitored temperature is above the threshold temperature range the data is rewritten to the memory component of the memory sub-system while the temperature of the memory component is at a high temperature subset of the threshold temperature range, wherein the low temperature subset includes the lower temperature value and does not include the relatively higher temperature value and the high temperature subset includes the relatively higher temperature value and does not include the lower temperature value, wherein the lower temperature value is about −55° C. and the low temperature subset increasingly extends above the lower temperature value.

A system, comprising:

• a plurality of memory components arranged to form a stackable cross-gridded array of memory cells;
• and
• a processing device coupled to the plurality of memory components, the processing device to perform operations comprising:
• monitoring a first temperature value of a memory component of a memory sub- system;
• writing data to the memory component of the memory sub-system at the first monitored temperature value;
• determining the first monitored temperature value exceeds a threshold temperature range that extends from a lower temperature value to a relatively higher temperature value;
• assigning an indication to the data written to the memory component of the memory sub-system at the first monitored temperature value as data written above the threshold temperature range when the first monitored temperature is above the threshold temperature range;
• monitoring a second temperature value of the memory component of the memory sub-system within the threshold temperature range;
• rewriting the data to the memory component of the memory sub-system at the second monitored temperature value, wherein when the first monitored temperature is below the threshold temperature range the data is rewritten to the memory component of the memory sub-system while the temperature of the memory component is at a low temperature subset of the threshold temperature range and when the first monitored temperature is above the threshold temperature range the data is rewritten to the memory component of the memory sub-system while the temperature of the memory component is at a high temperature subset of the threshold temperature range, wherein the low temperature subset includes the lower temperature value and does not include the relatively higher temperature value and the high temperature subset includes the relatively higher temperature value and does not include the lower temperature value, wherein the lower temperature value is about −55° C. and the low temperature subset increasingly extends above the lower temperature value;
• and
• assign an indication to the data rewritten to the memory component of the memory sub-system at the second monitored temperature value as data written within the threshold temperature range.