Data writing method, memory control circuit unit and memory storage apparatus

A memory control circuit unit, comprising:

• a host interface configured to be coupled to a host system;
• a memory interface configured to be coupled to a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of areas, each of the plurality of areas comprises a plurality of physical erasing units, each of the plurality of physical erasing units has a plurality of memory cells, wherein the plurality of areas comprises a first area and a second area;
• and
• a memory management circuit comprising a processor coupled to the host interface and the memory interface,
• wherein the memory management circuit is configured to receive a write command from the host system,
• the memory management circuit is further configured to calculate a write amplification factor (WAF) of the first area according to an amount of data previously written by the host system and an amount of data previously written to the first area, and
• the memory management circuit is further configured to determine, according to the write amplification factor of the first area of the plurality of areas, whether to write a first data corresponding to the write command into the first area or the second area of the plurality of areas, wherein it if is determined to write the first data into the second area, the written first data is copied into the first area after writing the first data,
• wherein the first area includes memory cells which store two or more number of bits per memory cell and the second area includes memory cells which store one bit per memory cell.

A memory storage apparatus, comprising:

• a connection interface unit configured to be coupled to a host system;
• a rewritable non-volatile memory module comprising a plurality of areas, each of the plurality of areas comprising a plurality of physical erasing units, and each of the plurality of physical erasing units having a plurality of memory cells, wherein the plurality of areas comprises a first area and a second area;
• and
• a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
• wherein the memory control circuit unit is configured to receive a write command from the host system,
• the memory control circuit unit is further configured to calculate a write amplification factor (WAF) of the first area according to an amount of data previously written by the host system and an amount of data previously written to the first area, and
• the memory control circuit unit is further configured to determine, according to the write amplification factor of the first area of the plurality of areas, whether to write a first data corresponding to the write command into the first area or the second area of the plurality of areas, wherein if it is determined to write the first data into the second area, the written first data is copied into the first area after writing the first data,
• wherein the first area includes memory cells which store two or more number of bits per memory cell and the second area includes memory cells which store one bit per memory cell.