Semiconductor device and method of operating the same

A method of operating a semiconductor device, the method comprising:

• generating a temperature voltage having a voltage level determined according to an internal temperature of the semiconductor device and a reference voltage having a constant voltage level;
• generating a temporary code including a sensing code value corresponding to the internal temperature and a boundary value indicating whether the internal temperature is included in a boundary portion associated with at least one temperature range corresponding to the sensing code value based on the temperature voltage and the reference voltage;
• and
• generating a correction code for generating an operation voltage of the semiconductor device by correcting the temporary code, based on the temporary code and a previously generated correction code.

A memory device comprising:

• a sensing voltage generator configured to generate a temperature voltage corresponding to an internal temperature of the memory device;
• a code generator configured to generate a temporary code including a sensing code value corresponding to the internal temperature and a boundary value indicating whether the internal temperature falls within a boundary portion of two sensing code values based on the temperature voltage;
• and
• a code correction component configured to selectively correct the temporary code based on the boundary value of the temporary code and a previously generated correction code and to output the temporary code or the corrected temporary code as a code for generating an operation voltage of the memory device.