Voltage based combining of block families for memory devices

A method comprising:

• creating a first block family comprising a first set of blocks that have been programmed within a first specified time window, wherein each block associated with the first block family is associated with a first set of read level offsets;
• creating a second block family comprising a second set of blocks that have been programmed within a second specified time window following the first specified time window, wherein each block associated with the second block family is associated with a second set of read level offsets;
• and
• responsive to determining that a difference in a voltage offset value associated with a die of the first block family and the same die of the second block family is below a voltage difference threshold for all dies of the memory device, combining the first block family and the second block family.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device operatively coupled to a memory device, perform operations comprising:

• creating a first block family comprising a first set of blocks that have been programmed within at least one of a first specified time window or a first specified temperature window, wherein each block associated with the first block family is associated with a first set of voltage level offsets;
• creating a second block family comprising a second set of blocks that have been programmed within at least one of a second specified time window following the first specified time window or a second specified temperature window, wherein each block associated with the second block family is associated with a second set of voltage level offsets;
• and
• responsive to a determining that a threshold criterion is satisfied, combining the first block family and the second block family, wherein determining that the threshold criterion is satisfied comprises determining that a difference in a voltage offset value associated with a die of the first block family and the same die of the second block family is below a voltage difference threshold for all dice of the memory device.