Method of controlling performance boosting of semiconductor device based on at least user input and feedback from previous boosting policies and semiconductor device performing the method

A semiconductor device comprising:

• a memory;
• and
• processing circuitry configured to control boosting a performance of the semiconductor device by,
• monitoring input of a user, and
• boosting the performance of the semiconductor device for a boosting interval by dividing the boosting interval for the input into a plurality of sub-boosting intervals and consecutively executing a plurality of boosting policies associated with respective ones of a plurality of macros during respective ones of the plurality of sub-boosting intervals within the boosting interval for the input, based on an input from the user and available energy during the boosting interval to generate a feedback signal utilized in subsequent ones of the plurality of sub-boosting intervals associated with boosting the performance for the input such that,
• during a first sub-boosting interval among the plurality of sub-boosting intervals, a first boosting policy among the plurality of boosting policies is executed to boost the performance to a first boosting level and the feedback signal is generated indicating an amount of usage of the semiconductor device while executing the first boosting policy, and
• during a second sub-boosting interval among the plurality of sub-boosting intervals sequentially after the first sub-boosting interval, a second boosting policy among the plurality of boosting policies is executed to boost the performance to a second boosting level based on the feedback signal obtained during the first sub-boosting interval.

A method of controlling boosting a performance of a semiconductor device, the method comprising:

• monitoring an input of a user;
• monitoring an amount of usage of the semiconductor device;
• and
• boosting the performance of the semiconductor device for a boosting interval by dividing the boosting interval for the input into a plurality of sub-boosting intervals and sequentially executing a first boosting policy and a second boosting policy included in plurality of boosting policies associated with respective ones of a plurality of macros based on the input of the user during respective ones of the plurality of sub-boosting intervals within the boosting interval, the amount of usage of the semiconductor device and available energy in the boosting interval to generate a feedback signal utilized in subsequent ones of the plurality of sub-boosting intervals associated with boosting the performance for the input such that, during execution of the second boosting policy, the boosting includes,
• obtaining the feedback signal based on a result of boosting performance to a first boosting level during a first sub-boosting interval among the plurality of sub-boosting intervals by performing the first boosting policy, the first feedback signal being associated with the amount of usage of the semiconductor device while executing the first boosting policy, and
• adaptively determining a second boosting level to be boosted during a second sub-boosting interval among the plurality of sub-boosting intervals by performing the second boosting policy based on the first boosting level, the feedback signal and a first consumed energy, the first consumed energy corresponding to energy consumed in the first boosting policy.