Semiconductor radiation detector

A method comprising:

• obtaining a substrate with an insulating layer and a semiconductor layer attached to the insulating layer;
• forming a first set of electrodes and a second set of electrodes from the semiconductor layer by etching the semiconductor layer through its entire thickness;
• introducing semiconductor particles among the first set of electrodes and the second set of electrodes;
• bonding the semiconductor layer with an electronics layer comprising a first set of electric contacts and a second set of electric contacts, such that the first set of electrodes are electrically connected to the first set of electric contacts and the second set of electrodes are electrically connected to the second set of electric contacts.

A radiation detector, comprising:

• an electronics layer comprising a first set of electric contacts and a second set of electric contacts;
• a radiation absorption layer configured to absorb radiation;
• a first set of electrodes and a second set of electrodes, wherein the first set of electrodes and the second set of electrodes are interdigitated and extend into the radiation absorption layer in a direction of thickness thereof;
• wherein the electronics layer and the radiation absorption layer are bonded such that the first set of electrodes are electrically connected to the first set of electric contacts and the second set of electrodes are electrically connected to the second set of electric contacts;
• wherein the second set of electrodes are cylindrical in shape or prismatic in shape.