Method and apparatus for calculating kink current of SOI device

A kink current calculation method for SOI device, comprising:

• obtaining impact ionization factor, parasitic transistor effect factor, and drain saturation current of the SOI device respectively;
• calculating the kink current of the SOI device according to the impact ionization factor, the parasitic transistor effect factor, and the drain saturation current,
• wherein obtaining the parasitic transistor effect factor of the SOI device specifically includes:
• obtaining channel length and carrier diffusion length in body region of the SOI device, and calculating the parasitic transistor effect factor of the SOI device according to the channel length and the carrier diffusion length in the body region.