Vertical-cavity surface-emitting laser device

A vertical-cavity surface-emitting laser device, comprising:

• a lower mirror;
• an upper mirror disposed over the lower mirror;
• an active region disposed between the lower mirror and the upper mirror;
• a lower n-type cladding layer disposed between the active region and the lower mirror;
• an upper n-type cladding layer disposed between the active region and the upper mirror;
• a heavily doped p-type semiconductor layer disposed between the active region and the upper n-type cladding layer;
• and
• a heavily doped n-type semiconductor layer disposed between the heavily doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the heavily doped p-type semiconductor layer,
• wherein the lower and upper n-type cladding layers respectively include an n-type contact layer including InP doped with an n-type impurity at a concentration in a range of 5E18/cm3 to 1E19/cm3.

A vertical-cavity surface-emitting laser device, comprising:

• a lower mirror;
• an upper mirror disposed over the lower mirror;
• an active region disposed between the lower mirror and the upper mirror;
• a lower n-type cladding layer disposed between the active region and the lower mirror;
• an upper n-type cladding layer disposed between the active region and the upper mirror;
• a heavily doped p-type semiconductor layer disposed between the active region and the upper n-type cladding layer;
• a heavily doped n-type semiconductor layer disposed between the heavily doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the heavily doped p-type semiconductor layer;
• a ring-shaped trench exposing the lower n-type cladding layer;
• and
• a mesa surrounded by the trench,
• wherein:
• the mesa comprises the active region, the heavily doped p-type semiconductor layer, the heavily doped n-type semiconductor layer, and the upper n-type cladding layer;
• and
• the upper mirror is disposed on the upper n-type cladding layer on the mesa.