Silicon monocrystal manufacturing method and silicon monocrystal pulling device

A monocrystalline silicon pull-up device comprising:

• a chamber;
• a quartz crucible disposed in the chamber;
• a heat shield covering an upper part of the quartz crucible;
• a gas inlet through which an inert gas is introduced into the chamber, the gas inlet being provided at an upper part of the chamber;
• a magnetic field applying portion configured to apply a horizontal magnetic field to a silicon melt in the quartz crucible;
• and
• a crystal pull-up axis configured to pull up monocrystalline silicon, the crystal pull- up axis being provided above the quartz crucible,
• wherein:
• a cut is formed in the heat shield,
• a distance between a surface of the silicon melt and a lower end of the heat shield is partially changed, or
• an eccentric elliptical shaped bore through which the monocrystalline silicon passes is formed in the heat shield, so that the heat shield is plane asymmetric with respect to the plane defined by the crystal pull-up axis and the application direction of the horizontal magnetic field and is rotationally asymmetric with respect to the crystal pull-up axis;
• and
• the monocrystalline silicon pull-up device is configured to be capable of forming a flow distribution of a flow of the inert gas flowing between a lower end of the heat shield and a surface of the silicon melt in the quartz crucible, the flow distribution being plane asymmetric with respect to the plane defined by the crystal pull-up axis of the pull-up device and the application direction of the horizontal magnetic field and the flow distribution being rotationally asymmetric with respect to the crystal pull-up axis.

A monocrystalline silicon pull-up device comprising:

• a chamber;
• a quartz crucible disposed in the chamber;
• a heat shield covering an upper part of the quartz crucible;
• a gas inlet through which an inert gas is introduced into the chamber, the gas inlet being provided at an upper part of the chamber;
• a magnetic field applying portion configured to apply a horizontal magnetic field to a silicon melt in the quartz crucible;
• a crystal pull-up axis configured to pull up monocrystalline silicon, the crystal pull-up axis being provided above the crucible, and
• one or more exhaust outlets through which the inert gas is discharged, the one or more exhaust outlets being provided at a lower part of the chamber,
• wherein:
• the one or more exhaust outlets differ in any of exhaust area, shape, position, and number so that the one or more exhaust outlets are asymmetrically configured with respect to the crystal pull-up axis, and
• the monocrystalline silicon pull-up device is configured to be capable of forming a flow distribution of a flow of the inert gas flowing between a lower end of the heat shield and a surface of the silicon melt in the quartz crucible, the flow distribution being plane asymmetric with respect to the plane defined by the crystal pull-up axis of the pull-up device and the application direction of the horizontal magnetic field and the flow distribution being rotationally asymmetric with respect to the crystal pull-up axis.