Chamber components for epitaxial growth apparatus

A susceptor for supporting a substrate within an epitaxial growth apparatus, comprising:

• an annular body extending to an outer radius from a center axis, the annular body including a top surface and a bottom surface opposite the top surface, the top surface including:
• an inner portion disposed at the center axis and extending to an inner radius, the inner portion having an inner portion bottom surface,
• a non-concave portion disposed along a circumference of the annular body, the non-concave portion having a non-concave bottom surface, wherein the inner portion bottom surface and the non-concave bottom surface are coplanar with the bottom surface, and a uniform thickness between the top surface and the non-concave bottom surface, and
• a transition portion connecting the inner portion to the non-concave portion, the inner radius extends to the transition portion, the transition portion is configured to form an abutment with the substrate and support the substrate, wherein the transition portion is at a higher elevation than the inner portion and at a lower elevation than the non-concave portion when the top surface is facing upward and the center axis is disposed vertically;
• a first plurality of through holes, each of the first plurality of holes has a first diameter;
• and
• a second plurality of through holes, each of the second plurality of holes has a second diameter, each extending from the top surface to the bottom surface, wherein the first diameter is substantially equal to the second diameter, the first plurality of through holes are positioned within an entirety of the inner portion at a first density and the second plurality of through holes are positioned in an entirety of the non-concave portion at a second density, wherein the first density of the first plurality of through holes in the inner portion and the second density of the second plurality of through holes in the non-concave portion are at least 5.0 through holes per square centimeters, wherein the first density and the second density are substantially the same.