Susceptor for a CVD reactor

A device for a chemical vapor deposition (CVD) reactor, the device comprising one or more influencing elements (10, 11) and a susceptor (1), the susceptor (1) comprising a circular surface section (3), on which a substrate holder (13) is supported, wherein the circular surface section (3) has channels (5), open in a direction of the substrate holder (13), that are connected in terms of flow to an in-feed opening (9) arranged at an end of a gas supply line (8), such that by feeding a gas flow through the respective channels (5) into a space between a lower face of the substrate holder (13) and a plane of the circular surface section (3), the substrate holder (13) is lifted into a ventilated position and is rotationally driven by an azimuthal velocity component of the gas flow about a center (Z) of the circular surface section (3), wherein the one or more influencing elements (10, 11), which influence a transfer of heat between a substrate and the substrate holder (13), are arranged in the circular surface section (3) of the susceptor (1), the one or more influencing elements (10, 11) comprising insert pieces (11) that are inserted in depressions (10) of the circular surface section (3), the insert pieces (11) made from a material that has a different specific thermal conductivity from that of the susceptor (1), and wherein at least a portion of the one or more influencing elements (10, 11) and at least a portion of the channels (5) lie on a common azimuthal line that is concentric with the circular surface section (3) having the center (Z).

A susceptor (1) for a chemical vapor deposition (CVD) reactor, the susceptor (1) comprising a circular surface section (3) on which a substrate holder (13) is supported, wherein the circular surface section (3) has channels (5), open in a direction of the substrate holder (13), that are connected in terms of flow to an in-feed opening (9) arranged at an end of a gas supply line (8), such that by feeding a gas flow through the respective channels (5) into a space between a lower face of the substrate holder (13) and a plane of the circular surface section (3), the substrate holder (13) is lifted into a ventilated position and is rotationally driven by an azimuthal velocity component of the gas flow about a center (Z) of the circular surface section (3),

• wherein one or more open depressions (10), which influence a transfer of heat between a substrate and the substrate holder (13), are arranged in the circular surface section (3) of the susceptor (1) and open towards the plane of the circular surface section (3),
• wherein the one or more open depressions (10) are completely filled with a gas,
• wherein, for each of the one or more open depressions (10), the open depression (10) comprises a floor (10′) and a peripheral wall (10″) that surrounds the floor (10′), the floor (10′) is spaced apart from the plane of the circular surface section (3) by a first distance, a height of the peripheral wall (10″) is equal to the first distance, the floor (10′) is closed such that the gas cannot enter into the open depression (10) through the floor (10′), and the peripheral wall (10″) is closed such that the gas cannot enter the open depression (10) through the peripheral wall (10″), and
• wherein at least a portion of the one or more open depressions (10) and at least a portion of the channels (5) lie on a common azimuthal line that is concentric with the circular surface section (3) having the center (Z).