Method of performing atomic layer deposition
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Hsien Cheng, Chung-Ting Ko, Tsung-Hsun Yu, Tze-Liang Lee, Chi On Chui
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Abstract
In an embodiment, a method of manufacturing a semiconductor device includes preparing a deposition processing chamber by flowing first precursors to form a dielectric coat along an inner sidewall of the deposition processing chamber and flowing a second precursor to form a hydrophobic layer over the dielectric coat. In addition one or more deposition cycles are performed. Next, the second precursor is flowed again to repair the hydrophobic layer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- preparing a deposition processing chamber, the preparing comprising:
- flowing first precursors to form a dielectric coat along an inner sidewall of the deposition processing chamber;
- and
- flowing a second precursor to form a hydrophobic layer over the dielectric coat;
- performing one or more deposition cycles;
- and
- after performing the one or more deposition cycles, flowing the second precursor to repair the hydrophobic layer.
A method of forming a semiconductor device, the method comprising:
- depositing a metal oxide layer over a wafer, the depositing the metal oxide layer comprising:
- depositing a silicon oxide coat over an inner sidewall of a processing chamber;
- flowing a hydrophobic precursor into the processing chamber to form a hydrophobic layer over the silicon oxide coat;
- after flowing the hydrophobic precursor, placing the wafer into the processing chamber;
- flowing an oxygen precursor over the wafer;
- flowing a metal precursor over the wafer;
- and
- patterning the metal oxide layer.
A method of manufacturing a semiconductor device, the method comprising:
- performing first processing steps on a first wafer;
- performing a first treatment process on an ALD tool comprising forming a hydrophobic coat over inner sidewalls of the ALD tool;
- placing the first wafer into the ALD tool;
- performing a first ALD process on the first wafer;
- removing the first wafer from the ALD tool;
- performing second processing steps on a second wafer;
- after removing the first wafer from the ALD tool, placing the second wafer into the ALD tool;
- performing a second ALD process on the second wafer;
- removing the second wafer from the ALD tool;
- and
- after removing the second wafer from the ALD tool, performing a second treatment process on the ALD tool comprising replenishing the hydrophobic coat over the inner sidewalls of the ALD tool.
Dependencies are inferred from the claim text.