Cleaning solution for removing dry etching residue and method for manufacturing semiconductor substrate using same

A method for manufacturing a semiconductor substrate, comprising:

• cleaning a cobalt-containing semiconductor substrate with a cleaning solution,
• wherein the cobalt-containing semiconductor substrate comprises a cobalt-containing metal wiring layer, an interlayer dielectric film and a dry etching-stopper layer containing aluminum oxide, the cleaning solution comprises water, an amine compound in a range of from 0.2 to 20 mass %, and a water-soluble organic solvent in a range of from 40 to 70 mass %, and the amine compound in the cleaning solution comprises at least one amine compound selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane and bis(hexamethylene)triamine, the water-soluble organic solvent in the cleaning solution has a viscosity of 10 mPa·s or less at 20° C., and pH of the cleaning solution is in a range of from 9.0 to 14.