Bis(diazadiene)cobalt compounds, method of making and method of use thereof

A method of synthesizing a bis(diazadiene)cobalt compound, comprising:

• adding a first alkyl amine to a diketone compound in a mixture of an organic solvent and water to obtain a diazadiene ligand;
• reacting the diazadiene ligand with a cobalt halide in the presence of a reducing co-reagent to form a bis(diazadiene)cobalt compound;
• wherein the bis(diazadiene)cobalt compound has a structure selected from the group consisting of:
• (a)
• wherein R is tert-amyl;
• wherein the bis(diazadiene)cobalt compound comprises a non-volatile residue of less than, or equal to, 1.1 weight percent.

A cobalt containing film deposited by using a bis(diazadiene)cobalt compound having a structure selected from the group consisting of:

• (a)
• wherein R is tert-amyl;
• and
• wherein the bis(diazadiene)cobalt compound comprises a non-volatile residue of less than, or equal to, 1.1 weight percent;
• wherein the cobalt containing film is selected from a group consisting of cobalt film, cobalt oxide film, cobalt silicide film, and cobalt nitride film;
• and
• wherein the cobalt containing film is deposited by using a method selected from a group consisting of thermal CVD, thermal ALD, plasma-enhanced ALD (PEALD), plasma enhanced chemical vapor deposition (PECVD), and plasma enhanced cyclic chemical vapor deposition (PECCVD).

A method of depositing a Co containing film on a substrate in a reactor, comprising:

• providing the substrate to the reactor;
• providing a Co precursor to the reactor;
• contacting the substrate with the Co precursor;
• and
• forming the Co containing film on the substrate;
• wherein the substrate is selected from the group consisting of metal, metal oxide, metal nitride, metal silicide, silicon, silicon oxide, silicon nitride, fluorosilicate glass (FSG), organosilicate glass (OSG), carbon doped oxide (CDO), porous low-K material, and combinations thereof;
• and
• wherein the Co precursor is a bis(diazadiene)cobalt compound having a structure selected from the group consisting of:
• (a)
• wherein R is tert-amyl;
• wherein the bis(diazadiene)cobalt compound comprises a non-volatile residue of less than, or equal to, 1.1 weight percent.

A method of selectively depositing cobalt on a substrate in a reactor, comprising:

• providing the substrate to the reactor wherein the substrate comprises at least one patterned dielectric layer and at least one patterned metal containing layer;
• providing a Co precursor to the reactor;
• contacting the substrate with the Co precursor;
• and
• forming Co containing film on the substrate;
• wherein the at least one patterned dielectric layer is selected from the group consisting of silicon dioxide, fluorosilicate glass (FSG), organosilicate glass (OSG), carbon doped oxide (CDO), porous low-K materials, and combinations thereof;
• wherein at least one patterned metal containing layer is selected from the group consisting of conductive metal layer selected from the group consisting of copper or copper alloy, cobalt or cobalt alloy, ruthenium or ruthenium alloy;
• and combinations thereof;
• metal oxide;
• metal nitride;
• metal silicate layer;
• and combinations thereof;
• wherein the Co containing film is selectively formed on the at least one patterned conductive metal layer with ratio of thickness of cobalt containing film formed on the at least one patterned conductive metal layer vs. formed on the at least one patterned dielectric layer >1;
• and
• wherein the Co precursor is a bis(diazadiene)cobalt compound having a structure selected from the group consisting of:
• (a)
• wherein R is tert-amyl;
• wherein the bis(diazadiene)cobalt compound comprises a non-volatile residue of less than, or equal to, 1.1 weight percent.