Hydrogen sensor on medium or low temperature solid micro heating platform

A hydrogen sensor on medium or low temperature solid micro heating platform, comprising:

• a substrate;
• a thermal-insulating layer disposed above the substrate, wherein the material of the thermal-insulating layer is an insulating material having a thermal conductivity of less than 0.12 W/(m*K);
• wherein the material of the thermal-insulating layer is organic colloid doped with inorganic nanoparticles or whiskers of low thermal conductivity;
• or
• wherein the material of the thermal-insulating layer is polyimide doped with 2 wt %-10 wt % nano silicon dioxide with a thickness of 30 microns to 100 microns;
• a heating structure disposed above the thermal-insulating layer, and isolated, thermally and electrically, from the substrate by the thermal-insulating layer;
• a thermal-conducting layer covering the heating structure;
• and
• a sensitive layer disposed on the thermal-conducting layer, wherein the sensitive layer is heated to a set temperature by the heating structure to improve sensitivity and reduce the response time, wherein the material of the sensitive layer is a hydrogen-sensitive material including palladium (Pd) or palladium-based alloy.

A hydrogen sensor on medium or low temperature solid micro heating platform, comprising:

• a substrate;
• a thermal-insulating layer disposed above the substrate;
• a heating structure disposed above the thermal-insulating layer, and isolated, thermally and electrically, from the substrate by the thermal-insulating layer;
• a thermal-conducting layer covering the heating structure, wherein the material of the thermal-conducting layer is an insulating material having a thermal conductivity of more than 1.5 W/(m*K);
• wherein the material of the thermal-conducting layer is organic colloid doped with inorganic nanoparticles or whiskers of high thermal conductivity;
• or
• wherein the material of the thermal-conducting layer is polyimide doped with 2 wt %-10 wt % nano silicon carbide whiskers with a thickness of 4 microns to 10 microns;
• and
• a sensitive layer disposed on the thermal-conducting layer, wherein the sensitive layer is heated to a set temperature by the heating structure to improve sensitivity and reduce the response time, wherein the material of the sensitive layer is a hydrogen-sensitive material including palladium (Pd) or palladium-based alloy.