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US 11,440,060 B2Granted
Method for cleaning substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHao-Ming Chang, Chia-Shih Lin
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Abstract
A method for cleaning a substrate includes receiving a photomask substrate comprising a multilayered reflective structure disposed over a surface of the photomask substrate, a capping layer disposed on the multilayered reflective structure and an absorber, wherein the photomask substrate has a plurality of conductive nanoparticles disposed over the surface; applying a first mixture comprising a SC1 solution, a DI water and O3 to the photomask substrate to remove the conductive nanoparticles; and applying a DI water to rinse the photomask substrate. A removal rate of the conductive nanoparticles is greater than approximately 90%.
Claims20
A method for cleaning a substrate, comprising:
- receiving a photomask substrate with a multilayered reflective structure disposed over a surface of the photomask substrate, a capping layer disposed on the multilayered reflective structure, and an absorber, wherein the photomask substrate has a plurality of conductive nanoparticles disposed over a surface of the multilayered reflective structure;
- applying a first mixture comprising an SC1 solution, deionized (DI) water, and ozone (O3) to the photomask substrate to remove the conductive nanoparticles, wherein a temperature of the first mixture is between approximately 20° C. and 40° C.;
- applying a second mixture to the photomask substrate, wherein the second mixture comprises DI water and H2;
- and
- applying DI water to rinse the photomask substrate,
- wherein the applying of the first mixture further comprises a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz,
- wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min, and a removal rate of the conductive nanoparticles over a duration including the applying of the first mixture and the applying of the DI water is greater than approximately 90%.
4 more elements
A method for cleaning a substrate, comprising:
- receiving a photomask substrate with a phase-shifting layer disposed over a surface of the photomask substrate and a shielding layer disposed on the phase-shifting layer, wherein the photomask substrate has a plurality of conductive nanoparticles disposed over a surface of shielding layer;
- applying a first mixture comprising an SC1 solution, deionized (DI) water, and ozone (O3) to the substrate to remove the conductive nanoparticles, wherein a temperature of the first mixture is between approximately 20° C. and 40° C.;
- applying a second mixture to the photomask substrate, wherein the second mixture comprises DI water and H2;
- and
- applying a DI water to rinse the photomask substrate,
- wherein the applying of the first mixture further comprises a mega sonic agitation, and a frequency of the mega sonic agitation is greater than approximately 3 MHz,
- wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min, and a removal rate of the conductive nanoparticles over a duration including the applying of the first mixture and the applying of the DI water is greater than approximately 90%.
4 more elements
A method for cleaning a substrate, comprising:
- receiving a semiconductor substrate having a surface and a plurality of patterns disposed on the surface, wherein the semiconductor substrate has a plurality of conductive nanoparticles disposed over the surface of the semiconductor substrate;
- applying a first mixture comprising an SC1 solution, deionized (DI) water, and ozone (O3) to the semiconductor substrate to remove the conductive nanoparticles, wherein a temperature of the first mixture is between approximately 20° C. and 40° C.;
- applying a second mixture to the semiconductor substrate, wherein the second mixture comprises DI water and H2;
- and
- applying a DI water to rinse the semiconductor substrate,
- wherein the applying of the first mixture further comprises a mega sonic agitation, and a frequency of the mega sonic agitation is greater than approximately 3 MHz,
- wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min, and a removal rate of the conductive nanoparticles over a duration including the applying of the first mixture and the applying of the DI water is greater than approximately 90%.
4 more elements
Dependencies are inferred from the claim text.