Non-volatile memory device and method of manufacturing the non-volatile memory device
AssigneeSK hynix Inc.
InventorIn Su Park
Life of this patent
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Abstract
A non-volatile memory device may include a semiconductor substrate, a stack structure and a source structure. The stack structure may be formed on the semiconductor substrate. The source structure may be formed in a slit configured to divide the stack structure. The source structure may include a sealing layer, a source liner, a gap-filling layer and a source contact pattern. The sealing layer may be formed on an inner wall of the slit. The source liner may be formed on a surface of the sealing layer and a bottom surface of the slit. The gap-filling layer may be formed in the slit. The source contact pattern may be formed on the gap-filling layer in the slit. The source contact pattern may be electrically connected with the source liner.
Claims16
A non-volatile memory device comprising:
- a semiconductor substrate;
- a stack structure formed on the semiconductor substrate;
- a slit configured to divide the stack structure;
- and
- a source structure formed in the slit,
- wherein the source structure comprises:
- a sealing layer formed on an inner side wall of the slit;
- a source liner formed on a surface of the sealing layer and a bottom surface of the slit, the source liner including a conductive layer;
- a gap-filling layer formed in the slit, the gap-filling layer including an insulating layer;
- and
- a source contact pattern formed on the gap-filling layer in the slit and electrically connected with the source liner.
A non-volatile memory device comprising:
- a source line including a conductive material;
- a stack structure including a plurality of conductive layers and a plurality of insulating layer that are alternately stacked, the stack structure including a plurality of slits for defining a plurality of memory blocks, wherein a selected portion of the source line is exposed by the slit;
- and
- a source structure formed in each of the slits,
- wherein the source structure includes:
- a sealing layer formed to cover a sidewall of the stack structure exposed by each of the slits;
- a gap-fill insulating layer configured to fill a first region of the slit;
- a conductive pattern formed in a second region of the slit, the second region being located over the first region;
- and
- a conductive liner formed to electrically connect the source line and the conductive pattern, and located between the gap-fill insulating layer and the sealing layer.
Dependencies are inferred from the claim text.