Surface emitting laser and method of manufacturing the same

A method of manufacturing a surface emitting laser, the method comprising:

• forming a first semiconductor layer in a seed region selectively provided in a growth substrate, wherein the first semiconductor layer in the seed region is formed by etching of the first semiconductor layer formed on the growth substrate;
• stacking an active layer and a second semiconductor layer in this order on the first semiconductor layer, after causing the first semiconductor layer to grow, from the seed region, in a direction parallel to a plane of the growth substrate
• forming a light emitting region outside the seed region;
• forming a second light reflecting layer that is opposed to the active layer with the second semiconductor layer being disposed therebetween;
• removing the growth substrate, after bonding a first support substrate to the growth substrate with the second light reflecting layer being disposed therebetween;
• and
• forming a first light reflecting layer that is opposed to the second light reflecting layer with the active layer being disposed therebetween.