Light emitting device (LED) and multi-stacked LED including charge generation junction (CGJ) layer, and manufacturing method thereof

A multi-stacked light emitting diode (LED) comprising an anode, a hole transport layer, at least two light emitting layers, and a cathode, the multi-stacked LED comprising:

• a charge generation junction (CGJ) layer in which a layer-by-layer structure in which an n-type oxide and a p-type oxide are sequentially stacked is formed between the at least two light emitting layers,
• wherein the n-type oxide includes zinc oxide (ZnO), and
• the p-type oxide is represented by the following formula:
• Cu2Sn2-XS3—(GaX)2O3 [Formula]
• where 0.2<x<1.5.

A method of manufacturing a light emitting device (LED), the method comprising:

• forming an anode on a substrate;
• forming a hole transport layer on the anode;
• forming a light emitting layer on the hole transport layer;
• forming a cathode on the light emitting layer;
• and
• forming a charge generation junction (CGJ) layer on at least one surface of the light emitting layer,
• wherein the CGJ layer is formed through film formation with a solution that includes an n-type oxide including zinc oxide (ZnO) and a p-type oxide represented by the following formula:
• Cu2Sn2-XS3—(GaX)2O3 [Formula]
• where 0.2<x<1.5.