Quantum dot light-emitting device and preparation method thereof

A quantum dot light-emitting device, comprising a first electrode layer, a quantum dot light-emitting layer, an electron transport layer, a second electrode layer and a third electrode layer which are sequentially arranged in a stacked mode, wherein a side, away from the first electrode layer, of the third electrode layer is configured as a light exiting side;

• and the second electrode layer and the third electrode layer are transparent electrode layers, and a work function of the second electrode layer is greater than a LUMO energy level of the electron transport layer and smaller than a work function of the third electrode layer;
• wherein a thickness of the second electrode layer is 5%-20% of a thickness of the third electrode layer;
• and
• the second electrode layer is an indium zinc material with an oxygen content being 0;
• and the third electrode layer is an indium zinc oxide material.