Transistor manufacturing method

A transistor manufacturing method comprising:

• forming a source electrode and a drain electrode on a substrate;
• forming a layer including an insulator layer to cover the source electrode and the drain electrode;
• and
• forming a gate electrode,
• wherein the forming the source electrode and the drain electrode on the substrate includes forming at least one of the source electrode and the drain electrode by:
• applying a liquid body including a first formation material on at least part of the substrate to form a plating base film;
• applying a liquid body including a second formation material on at least part of a surface of the plating base film to form a protection layer of the plating base film;
• forming a photoresist layer that includes a photoresist material on an upper surface of the protection layer to expose the photoresist layer with desired patterning light;
• causing the exposed photoresist layer to come into contact with a developer to remove the photoresist layer and the protection layer until the plating base film is uncovered corresponding to the patterning light;
• and
• after depositing a metal as a catalyst for electroless plating on a surface of the uncovered plating base film, causing an electroless plating solution to come into contact with the catalyst on the surface of the plating base film to perform electroless plating, and
• wherein the transistor manufacturing method comprises exfoliating the protection layer and the photoresist layer after performing the electroless plating.