Photoelectric conversion film, solid-state image sensor, and electronic device

A solid-state image sensor comprising:

• a photoelectric conversion film comprising a subphthalocyanine derivative represented by General Formula (1),
• where, in the General Formula (1),
• X represents any substituent selected from the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group,
• R1 to R3 each independently represent a substituted or unsubstituted ring structure, and
• at least one of R1 to R3 includes at least one hetero atom in the ring structure,
• wherein the photoelectric conversion film comprises a bulk hetero mixed layer.

An electronic device, comprising:

• a solid-state image sensor comprising a photoelectric conversion film comprising a subphthalocyanine derivative represented by General Formula (1);
• an optical system configured to guide incident light to the solid-state image sensor;
• and
• an arithmetic processing circuit configured to perform arithmetic processing of an output signal from the solid-state image sensor,
• wherein General Formula (1) is:
• where,
• X represents any substituent selected from the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group, and a substituted or unsubstituted arylthio group,
• R1 to R3 each independently represent a substituted or unsubstituted ring structure, and
• at least one of R1 to R3 includes at least one hetero atom in the ring structure, wherein the photoelectric conversion film comprises a bulk hetero mixed layer.