Memory devices and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChao-I Wu
Life of this patent
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Abstract
Memory devices and methods of forming the same are provided. A memory device includes a substrate, a first conductive layer, a phase change layer, a selector layer and a second conductive layer. The first conductive layer is disposed over the substrate. The phase change layer is disposed over the first conductive layer. The selector layer is disposed between the phase change layer and the first conductive layer. The second conductive layer is disposed over the phase change layer. In some embodiments, at least one of the phase change layer and the selector layer has a narrow-middle profile.
Claims20
A memory device, comprising:
- a substrate;
- a first conductive layer disposed over the substrate;
- a phase change layer disposed over the first conductive layer;
- a selector layer disposed between the phase change layer and the first conductive layer;
- and
- a second conductive layer disposed over the phase change layer,
- wherein at least one of the phase change layer and the selector layer has a narrow-middle profile that comprises a middle portion narrower than a top portion and a bottom portion of the same layer.
A memory device, comprising:
- a substrate;
- a first conductive layer disposed over the substrate;
- a second conductive layer disposed over the first conductive layer;
- a phase change layer and a selector layer disposed between the first conductive layer and the second conductive layer;
- and
- a heater disposed between the phase change layer and the selector layer, wherein a smallest width of the heater is wider than a smallest width of the phase change layer or a smallest width of the selector layer,
- wherein the selector layer comprises a bottom portion, a middle portion and a top portion, and a width of the middle portion is smaller than each of a width of the bottom portion and a width of the top portion.
A memory device, comprising:
- a substrate;
- a lower interconnect line disposed over the substrate and extending in a first direction;
- an upper interconnect line disposed over the lower interconnect line and extending in a second direction different from the first direction;
- and
- a phase change layer and a selector layer disposed between the lower interconnect line and the upper interconnect line,
- wherein facing sidewalls of one of the phase change layer and the selector layer are recessed inwardly without a turning point.
Dependencies are inferred from the claim text.