Spin transfer torque MRAM with a spin torque oscillator stack and methods of making the same

A MRAM cell, comprising:

• a magnetic tunnel junction comprising a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer;
• a spin torque oscillator stack;
• and
• a first nonmagnetic spacer layer located between the free layer and the spin torque oscillator stack,
• wherein:
• the spin torque oscillator stack comprises a spin torque layer, a spin polarization layer and a second nonmagnetic spacer located between the spin torque layer and the spin polarization layer;
• the spin torque layer comprises a first magnetic material having a first conical magnetization with respect to a vertical axis that is parallel to the fixed vertical magnetization direction of the reference layer;
• and
• an in-plane component of the first conical magnetization is free to precess around the vertical axis upon application of current through the spin torque layer, the second nonmagnetic spacer layer, and the spin polarization layer.