Magnetoresistive random access memory with larger alignment window and method of manufacturing the same

A method of manufacturing a magnetoresistive random access memory, comprising:

• providing a substrate;
• forming a conductive plug in said substrate, wherein said conductive plug has a protruding portion extending outwardly from the upper edge of said conductive plug;
• forming a bottom electrode material layer, a magnetic tunnel junction material layer and a top electrode material layer on said substrate and said conductive plug;
• and
• performing an anisotropic etch process to pattern said bottom electrode material layer, said magnetic tunnel junction material layer and said top electrode material layer, thereby forming a magnetic memory cell on said conductive plug, wherein said anisotropic etch process overetches said conductive plug and said substrate so that depressed regions are formed on said substrate at two sides of said magnetic memory cell.