Optoelectronic semiconductor device and method of operating an optoelectronic semiconductor device

An optoelectronic semiconductor device comprising:

• a semiconductor layer sequence comprising an active zone that generates radiation by electroluminescence;
• a p-electrode and an n-electrode;
• an electrically insulating passivation layer on side surfaces of the semiconductor layer sequence;
• and
• an edge field generating device on the side surfaces on a side of the passivation layer facing away from the semiconductor layer sequence at the active zone,
• wherein the edge field generating device is configured to generate an electric field at least temporarily in an edge region of the active zone so that during operation a current flow through the semiconductor layer sequence is controllable in the edge region, and
• (i) one of said electrodes extends through said active zone in the form of pins and said edge field generating device extends annularly around at least some of said pins and/or (ii) the semiconductor layer sequence is pixelated to islands, the edge field generating device extending directly around at least some of the islands.