Semiconductor light-emitting element

A semiconductor light emitting device comprising:

• a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination;
• a non-conductive reflective film formed over the plurality of semiconductor layers to reflect the light generated by the active layer towards the first semiconductor layer;
• an insulating layer formed on the non-conductive reflective film;
• a first electrode part, which is electrically connected to the first semiconductor layer;
• and
• a second electrode part, which is electrically connected to the second semiconductor layer;
• wherein the active layer is provided on the first semiconductor layer and the second semiconductor layer is provided on the active layer;
• wherein the first electrode part includes a first lower electrode formed under the non-conductive reflective film and electrically connected to the first semiconductor layer, one or more first connection electrodes formed between the non-conductive reflective film and the insulating layer, and a first bonding pad formed on the insulating layer;
• wherein the second electrode part includes a second lower electrode formed under the non-conductive reflective film and electrically connected to the second semiconductor layer, one or more second connection electrodes formed between the non-conductive reflective film and the insulating layer, and a second bonding pad formed on the insulating layer;
• wherein the one or more first connection electrodes and the one or more second connection electrodes are in contact with the non-conductive reflective film;
• wherein the non-conductive reflective film comprises a DBR (Distributed Bragg Reflector);
• wherein the insulating layer is formed of a dielectric;
• wherein the one or more first connection electrodes are extended through the non-conductive reflective film for electrical connection to the first lower electrode;
• wherein the one or more second connection electrodes are extended through the non-conductive reflective film for electrical connection to the second lower electrode;
• wherein the one or more first connection electrodes include a reflective metal;
• wherein the one or more second connection electrodes include a reflective metal;
• and
• wherein the non-conductive reflective film is covered and in contact with one of the one or more first connection electrodes and the one or more second connection electrodes by at least 50% as shown in a plane view.