Patterning method of quantum dot layer, quantum dot device and manufacturing method thereof

A patterning method of a quantum dot layer, comprising:

• forming a quantum dot layer, wherein the quantum dot layer comprises quantum dots and a photoinitiator;
• irradiating a preset portion of the quantum dot layer by light having a preset wavelength to quench the quantum dots in the preset portion and form a patterned quantum dot layer,
• before the preset portion of the quantum dot layer is irradiated by the light having the preset wavelength, the patterning method further comprising:
• adjusting a focal plane and a focal depth of the preset portion of the quantum dot layer while the light having the preset wavelength irradiates the preset portion of the quantum dot layer, and wherein the focal plane is located on an upper surface of the preset portion of the quantum dot layer in a thickness direction of the preset portion of the quantum dot layer, and the focal depth is twice of a thickness of the preset portion of the quantum dot layer, and retaining the photoinitiator in a portion other than the preset portion of the quantum dot layer.