Hybrid semiconductor photodetector assembly

A method of forming a semiconductor photodetector assembly configured to receive light at one or more wavelengths, the method comprising:

• coupling a first wide band gap semiconductor transducer layer material and a second transducer layer material to a substrate material, wherein the first transducer layer material is from a first semiconductor family;
• coupling a first contact material to an interface between the first transducer layer material and the second transducer layer;
• coupling a second contact material to the interface, the second contact material spaced apart from the first contact material;
• coupling a semiconductor absorber layer material of the semiconductor photodetector assembly to the second transducer layer material, wherein the semiconductor absorber layer material of the semiconductor photodetector assembly includes material from a second semiconductor family different from the first semiconductor family, and wherein the semiconductor absorber layer material of the semiconductor photodetector assembly extends partially between the first contact material and the second contact material such as to avoid electrical conduction between the first contact material and the second contact material,
• in a first state, forming a discontinuous two-dimensional electron gas (2DEG) channel between the first contact material and the second contact material and at the interface between the first transducer layer material and the second transducer layer material, wherein a discontinuity in the 2DEG channel is below and aligned with the semiconductor absorber layer material of the semiconductor photodetector assembly, and
• in a second state and in response to the light received by the semiconductor absorber layer material of the semiconductor photodetector assembly at the one or more input wavelengths, forming a continuous 2DEG channel between the first contact material and the second contact material.

A semiconductor photodetector assembly configured to operate in response to light received at one or more input wavelengths, the assembly comprising:

• a semiconductor absorber layer material of the semiconductor photodetector assembly configured to receive the light at the one or more input wavelengths and generate electron-hole pairs, wherein the semiconductor absorber layer material of the semiconductor photodetector assembly includes material from a first semiconductor family;
• and
• a wide band gap semiconductor transducer layer material of the semiconductor photodetector assembly coupled to the semiconductor absorber layer material of the semiconductor photodetector assembly, wherein the transducer layer material is configured to collect electrons from the semiconductor absorber layer material of the semiconductor photodetector assembly and form a two-dimensional electron gas (2DEG) channel, and wherein the transducer layer material is from a second semiconductor family different from the first semiconductor family,
• wherein the transducer layer material is a first transducer layer material, the assembly further comprising:
• a first contact material coupled to an interface between the first transducer layer material and a second transducer layer;
• a second contact material spaced apart from the first contact material, the second contact material coupled to the interface,
• wherein the 2DEG channel includes a plurality of interdigitated 2DEG channels extending partially from one of the first contact material and the second contact material to the other of the first contact material and the second contact material.