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US 11,309,447 B2Granted
Separate absorption charge and multiplication avalanche photodiode structure and method of making such a structure
AssigneeGlobalFoundries U.S. Inc.
InventorsAjey Poovannummoottil Jacob, Yusheng Bian
Life of this patent
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Abstract
One illustrative photodiode disclosed herein includes an N-doped anode region, a P-doped cathode region and at least one P-doped charge region positioned laterally between the N-doped anode region and the P-doped cathode region. In this example, the photodiode also includes a plurality of quantum dots embedded within the at least one P-doped charge region and an N-doped impact ionization region positioned laterally between the N-doped anode region and the at least one P-doped charge region.
Claims20
A photodiode, comprising:
- an N-doped anode region, wherein the N-doped anode region is positioned within an active semiconductor layer;
- a P-doped cathode region, wherein the P-doped cathode region is positioned within the active semiconductor layer;
- at least one P-doped charge region positioned laterally between the N-doped anode region and the P-doped cathode region;
- a plurality of quantum dots embedded within the at least one P-doped charge region;
- and
- an N-doped impact ionization region positioned laterally between the N-doped anode region and the at least one P-doped charge region.
3 more elements
A photodiode, comprising:
- a semiconductor-on-insulator (SOI) that comprises a base semiconductor layer, a buried insulation layer positioned on the base semiconductor layer and an active semiconductor layer positioned on the buried insulation layer;
- an N-doped anode region positioned within the active semiconductor layer;
- a P-doped cathode region positioned within the active semiconductor layer;
- at least one P-doped charge region positioned within the active semiconductor layer and laterally between the N-doped anode region and the P-doped cathode region;
- a plurality of quantum dots embedded within the at least one P-doped charge region;
- and
- an N-doped impact ionization region positioned in the active semiconductor layer laterally between the N-doped anode region and the at least one P-doped charge region.
4 more elements
A photodiode, comprising:
- a semiconductor-on-insulator (SOI) that comprises a base semiconductor layer, a buried insulation layer positioned on the base semiconductor layer and an active semiconductor layer positioned on the buried insulation layer, wherein the active semiconductor layer comprises silicon or silicon germanium;
- an N-doped anode region positioned within the active semiconductor layer;
- a P-doped cathode region positioned within the active semiconductor layer;
- at least one P-doped charge region positioned within the active semiconductor layer and laterally between the N-doped anode region and the P-doped cathode region;
- a plurality of germanium quantum dots embedded within the at least one P-doped charge region, wherein each of the germanium quantum dots has a tensile strain;
- an N-doped impact ionization region positioned in the active semiconductor layer laterally between the N-doped anode region and the at least one P-doped charge region;
- and
- a region of a substantially un-doped intrinsic semiconductor material layer positioned in the active semiconductor layer and laterally between the at least one P-doped charge region and the P-doped cathode region.
5 more elements
Dependencies are inferred from the claim text.