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US 11,309,446 B2Granted
Resistive switching element and photovoltaic device including the same
AssigneeEwha University-Industry Collaboration Foundation
InventorsWilliam Jo, Hye Jin Jin
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Abstract
The present disclosure relates to a resistive switching element in which polarization of a ferroelectric material layer and electron-hole separation phenomenon of a two dimensional semiconducting material layer are combined to induce resistive switching phenomenon, and a photovoltaic device such as a solar cell, including the resistive switching element.
Claims6
A resistive switching element, comprising:
- a bottom electrode formed on a substrate;
- an oriented ferroelectric material layer formed on the bottom electrode;
- a two dimensional semiconducting material layer formed on the ferroelectric material layer;
- and
- a top electrode formed on the two dimensional semiconducting material layer,
- wherein polarization of the ferroelectric material layer and electron-hole separation phenomenon of the two dimensional semiconducting material layer are combined to induce resistive switching phenomenon,
- wherein the ferroelectric material layer and the two dimensional semiconducting material layer are in direct contact,
- wherein the ferroelectric material layer has a crystal form of a hexagonal structure grown in (111) or (001) direction,
- wherein the ferroelectric material layer is poled upward or downward, and
- wherein the substrate is a (111)-oriented monocrystalline substrate or a (001)-oriented monocrystalline substrate.
7 more elements
Dependencies are inferred from the claim text.