Thin film transistor and display device including the same

A thin film transistor, comprising:

• an active layer over a substrate;
• a gate electrode over the active layer;
• a gate line connected with the gate electrode;
• and
• a gate insulation layer between the active layer and the gate electrode,
• wherein the active layer includes a channel region overlapping the gate electrode and a drain region and a source region on respective sides of the channel region,
• wherein the channel region includes at least one bent portion,
• wherein the gate electrode and the gate line are integrated with each other, and
• wherein a length of a straight line connecting the drain region and the source region by a shortest distance is greater than a width of the gate line parallel to the straight line.

A display device, comprising:

• a substrate;
• a thin film transistor on the substrate;
• and
• a display element on the substrate and electrically connected with the thin film transistor;
• wherein the thin film transistor includes:
• an active layer including a drain region and a source region on respective sides of a channel region;
• a gate electrode over the active layer;
• a signal line through which an electrical signal is to be applied to the gate electrode;
• and
• a gate insulation layer between the active layer and the gate electrode,
• wherein the active layer includes at least one bent portion,
• wherein the gate electrode and the signal line are integrated with each other, and
• wherein a length of a straight line connecting the drain region and the source region by a shortest distance is greater than a width of the signal line, the width of the signal line being parallel to the straight line.