Field effect transistor having source control electrode, manufacturing method thereof and electronic device
AssigneesBeijing Hua Tan Yuan Xin Electronics Technology Co., Ltd, Beijing Huatan Technology Co., Ltd.
InventorShibo Liang
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Abstract
A field effect transistor, a method of manufacturing the field effect transistor, and an electronic device are provided, wherein the field effect transistor comprises: a source(105) formed of a Dirac material(103) and a drain(107); a channel(102) disposed between the source(105) and the drain(107); and a source control electrode(108) disposed on the source(105) and for controlling the doping of the Dirac material(103) such that the Dirac material(103) and the channel(102) are doped in an opposite manner; and a gate(106) disposed on the channel(102) and electrically insulated from the channel(102).
Claims23
A field effect transistor having a source control electrode, comprises:
- a source and a drain, the source being formed of a Dirac material;
- a channel disposed between the source and the drain;
- a source electrode and the source control electrode that are disposed on the source, wherein the source control electrode is configured to apply a voltage on the Dirac material of the source to control doping of the Dirac material such that the Dirac material and the channel are doped opposite;
- and
- a gate disposed on the channel and electrically insulated from the channel.
A method for manufacturing a field effect transistor having a source control electrode, comprises:
- forming a channel on a substrate;
- forming a source and a drain on the substrate such that the channel is located between the source and the drain, the source being formed of a Dirac material;
- forming a source electrode on the source;
- forming, on the source, a source control electrode that is configured to apply a voltage on the Dirac material to control doping of the Dirac material such that the Dirac material and the channel are doped in an opposite manner;
- and
- forming a gate on the channel such that a projection of the gate on the substrate overlaps with a projection of the channel on the substrate, and the gate and the channel are electrically insulated.
An electronic device comprising a field effect transistor having a source control electrode, the field effect transistor having a source control electrode comprising:
- a source and a drain, the source being formed of a Dirac material;
- a channel disposed between the source and the drain;
- a source electrode and a source control electrode that are disposed on the source, wherein the source control electrode is configured to apply a voltage on the Dirac material of the source to control doping of the Dirac material such that the Dirac material and the channel are doped in an opposite manner;
- and a gate disposed on the channel and electrically insulated from the channel.
Dependencies are inferred from the claim text.