Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhi-Chang Lin, Shih-Cheng Chen, Jung-Hung Chang, Lo-Heng Chang, Chien-Ning Yao
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Abstract
A semiconductor device includes a substrate, a semiconductor layer, a gate structure, source/drain regions, a bottom isolation layer, and a bottom spacer. The semiconductor layer is above the substrate. The gate structure is above the substrate and surrounds the semiconductor layer. The source/drain regions are on opposite sides of the semiconductor layer. The bottom isolation layer is between the substrate and the semiconductor layer. The bottom spacer is on a sidewall of the bottom isolation layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- a semiconductor layer above the substrate;
- a gate structure above the substrate and surrounding the semiconductor layer;
- source/drain regions on opposite sides of the semiconductor layer;
- a bottom isolation layer between the substrate and the semiconductor layer;
- a bottom spacer on a sidewall of the bottom isolation layer;
- and
- an inner sidewall spacer between the gate structure and one of the source/drain regions, wherein a thickness of the inner sidewall spacer is greater than a thickness of the bottom spacer.
A semiconductor device, comprising:
- a substrate;
- a bottom isolation layer above the substrate;
- a channel layer above the bottom isolation layer, wherein a width of the channel layer is greater than a width of the bottom isolation layer;
- a gate structure wrapping around the channel layer;
- a semiconductive protection layer between the channel layer and the bottom isolation layer, wherein the semiconductive protection layer is in contact with the bottom isolation layer;
- and
- source/drain regions connected to the channel layer.
A method for manufacturing a semiconductor device, comprising:
- forming a semiconductor strip above a substrate, wherein the semiconductor strip comprises a plurality of first and second semiconductor layers alternately arranged;
- forming a bottom dielectric isolation layer between the semiconductor strip and the substrate;
- recessing the bottom dielectric isolation layer to form a first recess therein;
- forming a bottom spacer in the first recess and in contact with the substrate;
- removing the first semiconductor layers;
- and
- forming a gate structure above the substrate to surround the second semiconductor layers.
Dependencies are inferred from the claim text.